The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Nov. 20, 2017
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Markus Zundel, Egmating, DE;

Rainer Pelzer, Wernberg, AT;

Manfred Schneegans, Vaterstetten, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/4502 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10157 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. The load terminal includes a metallization having a frontside and a backside. The backside interfaces with a surface of the semiconductor body. The frontside is configured to interface with a wire structure having at least one wire configured to conduct at least a part of the load current. The frontside has a lateral structure formed at least by at least one local elevation of the metallization. The local elevation has a height in an extension direction defined by a distance between the base and top of the local elevation and, in a first lateral direction perpendicular to the extension direction, a base width at the base and a top width at the top.


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