The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Mar. 03, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Yoichi Minemura, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11529 (2017.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 23/522 (2006.01); H01L 27/11578 (2017.01); H01L 27/11551 (2017.01); H01L 27/11514 (2017.01); H01L 27/11597 (2017.01); H01L 27/1157 (2017.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11514 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 27/11597 (2013.01); G11C 16/26 (2013.01);
Abstract

A memory device includes a semiconductor layer including adjacent cell and non-cell areas in a first direction, first and second conductive lines on the layer, extending along the first direction and arranged away from each other in a second direction crossing the first direction, conductor layers arranged above the semiconductor layer in a third direction crossing the first and second directions, pillars on the cell area, passing through the conductor layers in the third direction and forming memories at intersections with the conductor layers, and shunt lines extending along the second direction and arranged in the first direction above the cell area, each of the shunt lines connected to the first and second lines via third conductive lines. A length between the shunt line closest to the non-cell area and a boundary between the cell and non-cell areas is less than a length between adjacent shunt lines.


Find Patent Forward Citations

Loading…