The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Sep. 29, 2020
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of fabricating a semiconductor device includes forming a first conductive structure over a substrate, successively forming a first spacer layer, a sacrificial layer, and a second spacer layer on the first conductive structure, forming a second conductive structure adjacent the first conductive structure and in contact with a lower portion of the second spacer layer, partially removing an upper portion of the second spacer layer to expose the sacrificial layer, removing the sacrificial layer through a vapor etch process to form an air gap between the lower portion of the second spacer layer and the first spacer layer, and forming a capping layer to cap the air gap.