The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Aug. 12, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Wan Nam, Hwaseong-si, KR;

Euihyun Cheon, Suwon-si, KR;

Byungjun Min, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); G11C 16/16 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/16 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A nonvolatile memory device includes a peripheral circuit region and a memory cell region. The peripheral circuit region includes a block selecting circuit, a block unselecting circuit, and a first metal pad. The memory cell region is vertically connected to the peripheral circuit region, and includes a first memory block and a second metal pad directly connected to the first metal pad. The block selecting circuit is connected with ground selection lines, word lines, and string selection lines, and provides corresponding driving voltages to the ground selection lines, the word lines, and the string selection lines in response to a block selection signal corresponding to the first memory block, respectively. The block unselecting circuit is connected only with specific string selection lines, and provides an off-voltage only to the specific string selection lines in response to a block un-selection signal.


Find Patent Forward Citations

Nam, Sang-Wan. (2022). Nonvolatile memory device (U.S. Patent No. 11238934). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11238934

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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