The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Aug. 07, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Ordos Yuansheng Optoelectronics Technology Co., Ltd., Inner Mongolia, CN;
Duolong Ding, Beijing, CN;
Huafeng Liu, Beijing, CN;
Shengwei Zhao, Beijing, CN;
Chaochao Sun, Beijing, CN;
Chao Wang, Beijing, CN;
Jingping Lv, Beijing, CN;
Meng Yang, Beijing, CN;
Lei Yang, Beijing, CN;
Chongliang Hu, Beijing, CN;
Lin Xie, Beijing, CN;
Bule Shun, Beijing, CN;
Shimin Sun, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD., Ordos, CN;
Abstract
A pixel structure and a manufacturing method thereof, an array substrate and a display device are provided. The pixel structure includes: a signal line; a common electrode line an extension direction of which is same as an extension direction of the signal line; a transistor including a semiconductor layer which includes a source region and a drain region; a first storage electrode which is insulated from the common electrode line and is connected with the drain region of the semiconductor layer; and a second storage electrode which is connected with the common electrode line and is insulated from the first storage electrode. In the pixel structure, portions, between the signal line and the common electrode line, of the first storage electrode and the second storage electrode includes overlap with each other to form a first storage capacitance.