The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Mar. 26, 2019
Applicants:

Xiao-dong Xiang, Danville, CA (US);

Yuewei Wu, Ningbo, CN;

Xiao-ping Wang, Shanghai, CN;

Inventors:

Xiao-dong Xiang, Danville, CA (US);

Yuewei Wu, Ningbo, CN;

Xiao-ping Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 25/00 (2006.01); G01N 25/18 (2006.01); G01K 1/143 (2021.01);
U.S. Cl.
CPC ...
G01N 25/005 (2013.01); G01N 25/18 (2013.01); G01K 1/143 (2013.01);
Abstract

The invention discloses a apparatus and a method for rapid measurement of heat capacity of a thin film material. Specifically, the apparatus comprises a control device, a clock synchronizer, a flat peak laser device, a rapid thermometer and a heat capacity output device; the control device and the clock synchronizer are signally connected, and the clock synchronizer is signally connected to the flat peak laser device and the rapid thermometer; In the working state, the control device sends a start signal to the clock synchronizer, and the flat peak laser device and the fast thermometer coordinately cooperate; the flat peak laser device irradiates a laser with a spatially flat peak to the surface of the sample; At the same time, the rapid thermometer captures the surface temperature of the sample at a certain point in time during the heating process of the sample, and inputs the measured data into the heat capacity output device to obtain the desired heat capacity parameter. The device of the invention has simple structure, high efficiency and accuracy, and can provide reliable parameter data for the current thermal property setting of various ultra-thin semiconductor films.


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