The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Sep. 10, 2019
Applicant:

Us Synthetic Corporation, Orem, UT (US);

Inventors:

Brandon Paul Linford, Draper, UT (US);

Cody William Knuteson, Salem, UT (US);

Assignee:

US SYNTHETIC CORPORATION, Orem, UT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
E21B 10/567 (2006.01); E21B 10/55 (2006.01); E21B 10/46 (2006.01); B24D 3/10 (2006.01); B24D 18/00 (2006.01);
U.S. Cl.
CPC ...
B24D 3/10 (2013.01); B24D 18/0009 (2013.01); E21B 10/46 (2013.01); E21B 10/55 (2013.01); E21B 10/567 (2013.01);
Abstract

Embodiments relate to polycrystalline diamond compacts ('PDCs') including a polycrystalline diamond ('PCD') table having a diamond grain size distribution selected for improving leachability. In an embodiment, a PDC includes a PCD table bonded to a substrate. The PCD table includes diamond grains exhibiting diamond-to-diamond bonding therebetween. The diamond grains includes a first amount being about 30 to about 65 volume % of the diamond grains and a second amount being about 18 to about 65 volume % of the diamond grains. The first amount exhibits a first average grain size of about 8 μm to about 22 μm. The second amount exhibits a second average grain size that is greater than the first average grain size and is about 15 μm to about 50 μm. Other embodiments are directed methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.


Find Patent Forward Citations

Loading…