The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jul. 11, 2018
International Business Machines Corporation, Armonk, NY (US);
John Collins, Pleasantville, NY (US);
Joel P. de Souza, Putam Valley, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure includes forming at least one trench in a non-porous silicon substrate, the at least one trench providing an energy storage device containment feature. The method also includes forming an electrical and ionic insulating layer disposed over a top surface of the non-porous silicon substrate. The method further includes forming, in at least a base of the at least one trench, a porous silicon layer of unitary construction with the non-porous silicon substrate. The porous silicon layer provides at least a portion of a first active electrode for an energy storage device disposed in the energy storage device containment feature.