The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Oct. 21, 2019
Applicant:
Shenzhen Weitongbo Technology Co., Ltd., Shenzhen, CN;
Inventors:
Guofeng Yao, Shenzhen, CN;
Jian Shen, Shenzhen, CN;
Assignee:
SHENZHEN WEITONGBO TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); C23C 14/5813 (2013.01); H01L 43/02 (2013.01);
Abstract
Embodiments of the present application provide a memristor electrode material preparation method and apparatus, and a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride substrate; and subjecting the metal nitride substrate to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, so as to obtain a memristor electrode material.