The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Oct. 29, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Mingjiao Liu, Gilbert, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/861 (2006.01); H01L 29/868 (2006.01); H01L 29/66 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 29/47 (2013.01); H01L 29/6609 (2013.01);
Abstract
A device includes a first doped semiconductor region and a second oppositely doped semiconductor region that are separated by an undoped or lightly-doped semiconductor drift region. The device further includes a first electrode structure making an ohmic contact with the first doped semiconductor region, and a second electrode structure making a universal contact with the second doped semiconductor region. The universal contact of the second electrode structure allows flow of both electrons and holes into, and out of, the device.