The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Nov. 29, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Abstract
A fabrication method of a thin film transistor is provided. The fabrication method includes: forming a gate electrode, an active layer, a drain electrode and a source electrode on the base substrate, in which the active layer includes a channel region and a second portion on both sides of the channel region, and at least a portion of the channel region is overlapped with the gate electrode; and performing a laser annealing process on a side of the base substrate by using a laser, in which the channel region is shielded without being irradiated by the laser, a resistivity of the second portion of the active layer is lower than a resistivity of the channel region, and the second portion of the active layer is connected with the source electrode and the drain electrode. A thin film transistor, an array substrate and a display device are further provided.