The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Nov. 07, 2019
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventor:

Huafei Xie, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02F 1/1335 (2006.01); H01C 17/00 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); G02F 1/133516 (2013.01); G02F 1/136286 (2013.01); H01C 17/003 (2013.01); H01L 21/02019 (2013.01); H01L 21/02052 (2013.01); H01L 21/0273 (2013.01); H01L 21/02266 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/78678 (2013.01); H05K 2203/092 (2013.01);
Abstract

The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a flat film, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the flat film, wherein the flat film and the reinforcing portions constitute a gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the flat film, so as to increase an effective overlapping area between the flat film and the active layer, and reduce a width and a length of the thin film transistor.


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