The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jan. 17, 2020
Denso Corporation, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes an inversion type semiconductor element including: a semiconductor substrate; a first conductive type layer formed on the semiconductor substrate; an electric field blocking layer formed on the first conductive type layer and including a linear shaped portion; a JFET portion formed on the first conductive type layer and having a linear shaped portion; a current dispersion layer formed on the electric field blocking layer and the JFET portion; a deep layer formed on the electric field blocking layer and the JFET portion; a base region formed on the current dispersion layer and the deep layer; a source region formed on the base region; trench gate structures including a gate trench, a gate insulation film, and a gate electrode, and arranged in a stripe shape; an interlayer insulation; a source electrode; and a drain electrode formed on a back surface side of the semiconductor substrate.