The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Oct. 31, 2018
The Regents of the University of California, Oakland, CA (US);
Shadi A. Dayeh, San Diego, CA (US);
Woojin Choi, San Diego, CA (US);
Renjie Chen, Albuquerque, NM (US);
Atsunori Tanaka, La Jolla, CA (US);
Ren Liu, La Jolla, CA (US);
The Regents of the Unverslty of California, Oakland, CA (US);
Abstract
Devices and methods of the invention use a plurality of Fin structures and or combine a planar portion with Fin structures to compensate for the first derivative of transconductance, gm. In preferred methods and devices, Fins have a plurality of widths and are selected to lead to the separate turn-on voltage thresholds for the largest, intermediate and smallest widths of the MIS HEMT fins flatten the transconductance gm curve over an operational range of gate source voltage.