The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jan. 04, 2019
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/285 (2006.01); C23C 16/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); C23C 16/045 (2013.01); C23C 16/32 (2013.01); C23C 16/45531 (2013.01); C23C 16/45536 (2013.01); H01L 21/02194 (2013.01); H01L 21/28088 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 29/78 (2013.01);
Abstract
Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.