The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Mar. 22, 2019
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Hidehiro Asai, Ibaraki, JP;
Takahiro Mori, Ibaraki, JP;
Abstract
[Problem] To improve the drain current ON/OFF ratio characteristics. [Solution] A tunnel field-effect transistorof the present invention is such that, when the gate length is denoted by Land the extension distance of a source regionextended toward a drain regionfrom a position in the source regionis denoted by L, Lexpressed in Formula (1) below as the shortest distance between the position of an extension end of the source regionbased on a drain-side reference position as the side face position of a gate electrodeclosest to the drain region, and the position in the semiconductor layeropposite to the drain-side reference position in the height direction of the gate electrodesatisfies a condition of Inequality (2) below. Note that lin Inequality (2) denotes a shortest tunnel distance over which carriers move from the source region to a channel region through a tunnel junction surface in an OFF state of the tunnel field-effect transistor.