The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Dec. 20, 2019
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventors:

Zhenguo Lin, Shenzhen, CN;

Xingyu Zhou, Shenzhen, CN;

Yuanjun Hsu, Shenzhen, CN;

Poyen Lu, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1288 (2013.01);
Abstract

The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.


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