The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Apr. 17, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Young Geun Jang, Hwaseong-si, KR;
Wan Sup Shin, Seongnam-si, KR;
Ki Hong Lee, Suwon-si, KR;
Jae Jung Lee, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11573 (2017.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01);
Abstract
A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.