The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 25, 2022

Filed:

Mar. 24, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jihye Kim, Anyang-si, KR;

Jaehoon Lee, Cheongju-si, KR;

Jiyoung Kim, Hwaseong-si, KR;

Bongtae Park, Seoul, KR;

Jaejoo Shim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/8242 (2006.01); H01L 27/112 (2006.01); H01L 27/11585 (2017.01); H01L 27/32 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 27/10876 (2013.01); H01L 27/11585 (2013.01); H01L 27/3223 (2013.01); H01L 29/4925 (2013.01);
Abstract

A semiconductor device includes a substrate having a conductive region and an insulating region; gate electrodes including sub-gate electrodes spaced apart from each other and stacked in a first direction perpendicular to an upper surface of the substrate and extending in a second direction perpendicular to the first direction and gate connectors connecting the sub-gate electrodes disposed on the same level; channel structures penetrating through the gate electrodes and extending in the conductive region of the substrate; and a first dummy channel structure penetrating through the gate electrodes and extending in the insulating region of the substrate and disposed adjacent to at least one side of the gate connectors in a third direction perpendicular to the first and second directions.


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