The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Jul. 26, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Min Su Park, Seoul, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G06F 3/06 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); G06F 3/0634 (2013.01); G06F 3/0659 (2013.01); G11C 7/106 (2013.01); G11C 7/109 (2013.01); G11C 7/1057 (2013.01); G11C 7/1063 (2013.01); G11C 7/1066 (2013.01); G11C 7/1069 (2013.01); G11C 7/1084 (2013.01); G11C 7/1087 (2013.01); G11C 7/1093 (2013.01); G11C 7/1096 (2013.01);
Abstract
A semiconductor device includes an internal command pulse generation circuit and a sense data generation circuit. The internal command pulse generation circuit is configured to generate an internal command pulse based on a write signal, a latency code, and an offset code. The sense data generation circuit is configured to generate a sense data based on the internal command pulse and an internal data strobe signal and configured to generate the sense data based on the internal command pulse and a delayed strobe signal.