The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
May. 11, 2018
Applicant:
Hewlett-packard Development Company, L.p., Spring, TX (US);
Inventors:
Zhizhang Chen, Corvallis, OR (US);
Lawrence H. White, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Spring, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/14 (2006.01); B41J 2/16 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
B41J 2/14129 (2013.01); B41J 2/1601 (2013.01); B41J 2/1642 (2013.01); C23C 16/402 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01);
Abstract
A passivation stack can include a laminated film, including from 8 to 40 alternating layers of HfOand SiO. The layers can individually have a thickness from 8 Angstroms to 40 Angstroms, and the laminated film can have a total thickness of 280 Angstroms to 600 Angstroms. The passivation stack can also include a barrier film of HfOhaving a thickness from 50 Angstroms to 300 Angstroms applied to the laminated film.