The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Jul. 26, 2018
Applicant:
Diodes Incorporated, Plano, TX (US);
Inventor:
Wei Wu, Freemont, CA (US);
Assignee:
Diodes Incorporated, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H03K 5/24 (2006.01); H03K 5/26 (2006.01); H03K 3/037 (2006.01); G01R 19/255 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H03K 3/037 (2013.01); H03K 5/24 (2013.01); H03K 5/26 (2013.01); G01R 19/255 (2013.01); H03K 2217/0054 (2013.01);
Abstract
An over-power protection circuit for a MOSFET includes an over-current protection circuit and a current limit setting circuit, and an over-power protection circuit configured to continuously monitor a voltage across the MOSFET being protected to prevent over-power conditions, and to dynamically determine a maximum current limit based on the monitored voltage and a pre-set maximum power limit.