The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Oct. 25, 2018
Applicant:
Osram Oled Gmbh, Regensburg, DE;
Inventors:
Martin Mueller, Bernhardswald, DE;
Guenther Groenninger, Seubersdorf, DE;
Assignee:
OSRAM OLED GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/042 (2006.01); H01S 5/40 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3095 (2013.01); H01S 5/042 (2013.01); H01S 5/0425 (2013.01); H01S 5/3054 (2013.01); H01S 5/4043 (2013.01); H01S 5/026 (2013.01);
Abstract
A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.