The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Nov. 12, 2019
Applicant:
Sharp Kabushiki Kaisha, Sakai, JP;
Inventors:
Kazuhiko Wada, Sakai, JP;
Ryuhichi Sogabe, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01); H01S 5/20 (2006.01); H01S 5/028 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2214 (2013.01); H01S 5/0421 (2013.01); H01S 5/04252 (2019.08); H01S 5/2009 (2013.01); H01S 5/3063 (2013.01); H01S 5/3072 (2013.01); H01S 5/3436 (2013.01); H01S 5/0287 (2013.01); H01S 5/3213 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01);
Abstract
An AlGaInPAs-based semiconductor laser device includes a substrate, an n-type clad layer, an n-type guide layer, an active layer, a p-type guide layer composed of AlGaInP containing Mg as a dopant, a p-type clad layer composed of AlInP containing Mg as a dopant, and a p-type cap layer composed of GaAs. Further, the semiconductor laser device has, between the p-type guide layer and the p-type clad layer, a Mg-atomic concentration peak which suppresses inflow of electrons, moving from the n-type clad layer to the active layer, into the p-type guide layer or the p-type clad layer.