The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Jul. 07, 2020
International Business Machines Corporation, Armonk, NY (US);
Ashim Dutta, Menands, NY (US);
Saumya Sharma, Easton, CT (US);
Tianji Zhou, Albany, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments of the present invention are directed to forming a planar Resistive Random Access Memory (RRAM) device with a shared top electrode. In a non-limiting embodiment of the invention, a first trench having a first width and a second trench having a second width less than the first width are formed in a dielectric layer. A bottom liner is formed on sidewalls of the first trench. The bottom liner pinches off the second trench. A top liner is formed on sidewalls of the bottom liner in the first trench. The top liner is formed such that a portion of the bottom liner at a bottommost region of the first trench remains exposed. The exposed portion of the bottom liner is removed, and a memory cell material is formed in the first trench.