The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Nov. 11, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Wen-Luh Liao, Hsinchu, TW;

Cheng-Long Yeh, Hsinchu, TW;

Ko-Yin Lai, Hsinchu, TW;

Yao-Ru Chang, Hsinchu, TW;

Yung-Fu Chang, Hsinchu, TW;

Yi Hsiao, Hsinchu, TW;

Shih-Chang Lee, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.


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