The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Apr. 03, 2015
Sharp Kabushiki Kaisha, Sakai, JP;
Masatomi Harada, Sakai, JP;
Toshihiko Sakai, Sakai, JP;
Rihito Suganuma, Sakai, JP;
Kazuya Tsujino, Sakai, JP;
Tokuaki Kuniyoshi, Sakai, JP;
Takeshi Kamikawa, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×10cmor more, and is lower than the dopant concentration of the first concentration layer.