The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Oct. 24, 2014
Sharp Kabushiki Kaisha, Osaka, JP;
Kenji Kimoto, Osaka, JP;
Naoki Koide, Osaka, JP;
Liumin Zou, Osaka, JP;
Masamichi Kobayashi, Osaka, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a silicon substrate (), a first non-crystalline semiconductor layer (), a second non-crystalline semiconductor layer (), a first electrode (), and a second electrode (). One electrode () includes first conductive layers (), and second conductive layers (). The first conductive layers () have a first metal as a main component. The second conductive layers () contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (), and are disposed to be closer to the silicon substrate () than the first conductive layers ().