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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11227943 B1

PDFFull Text
Date of Patent:
Jan. 18, 2022

Filed:

Jun. 25, 2018

High electron mobility transistors and methods for fabricating the same

Applicant:

Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Travis J. Anderson, Alexandria, VA (US);

Virginia D. Wheeler, Alexandria, VA (US);

Karl D. Hobart, Alexandria, VA (US);

Francis J. Kub, Arnold, MD (US);

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US);

Attorney:

U.S. Naval Research Laboratory

Primary Examiner:

Nicholas J Tobergte

Assistant Examiner:

Kien C Ly

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 23/31 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02189 (2013.01); H01L 21/02205 (2013.01); H01L 21/28264 (2013.01); H01L 29/205 (2013.01); H01L 29/408 (2013.01); H01L 29/4236 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 21/02274 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01);
Abstract

A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT also includes a ZrOgate dielectric layer formed by either a ZTB precursor, a TDMA-Zr precursor, or both. The HEMT may also include a recess in the barrier layer in the gate region of the HEMT. The HEMTs may operate in an enhancement mode.

Find Patent Forward Citations

Quick Actions:

Anderson, Travis. (2022). High electron mobility transistors and methods for fabricating the same (U.S. Patent No. 11227943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11227943

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