The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Dec. 11, 2018
Hkc Corporation Limited, Guangdong, CN;
Qionghua Mo, Shenzhen, CN;
En-Tsung Cho, Shenzhen, CN;
HKC Corporation Limited, Guangdong, CN;
Abstract
Provided are a thin film transistor structure, a manufacturing method thereof, and a display device. The method comprises: providing a substrate (), and sequentially forming a gate (), a gate insulating layer (), an active layer (), a doped layer (), a source (), a drain () and a channel region () on the substrate (); placing the channel region () in a preset gas atmosphere for heating treatment; wherein, the channel region () is placed in a nitrogen atmosphere to heat for a first preset time, in a mixed atmosphere of nitrogen and ammonia to heat for a second preset time, in an ammonia atmosphere to heat for a third preset time; or first heating the channel region () for a fourth preset time, finally placing in the ammonia atmosphere to heat for a fifth preset time.