The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Mar. 02, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Mitsuo Ikeda, Yokkaichi Mie, JP;

Daisuke Ikeno, Yokkaichi Mie, JP;

Akihiro Kajita, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/11563 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/518 (2013.01); H01L 27/11563 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract

According to one embodiment, a semiconductor device includes a substrate, a plurality of insulating films and a plurality of electrode films provided alternately on the substrate. The semiconductor device further includes a first insulating film, a first charge storage film, a third insulating film, a second charge storage film, a second insulating film, and a first semiconductor film that are sequentially provided along at least one side surface of each of the electrode films. The first charge storage film includes either (i) molybdenum, or (ii) titanium and nitrogen, and the second charge storage film includes a semiconductor film.


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