The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Sep. 03, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Ze Chen, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/0696 (2013.01); H01L 29/7397 (2013.01);
Abstract
Plural gate trenches are formed on an upper surface side of a semiconductor substrate of a first conductivity type. Gate electrodes are embedded in the plural gate trenches. Plural dummy gate trenches are formed at equivalent intervals between the neighboring gate trenches on the upper surface side of the semiconductor substrate. Dummy gate electrodes are embedded in the plural dummy gate trenches and connected with an emitter electrode. An interval between the gate trench and the dummy gate trench that neighbor each other is shorter than an interval between the neighboring dummy gate trenches.