The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Mar. 23, 2018
Renesas Electronics Corporation, Tokyo, JP;
Ryo Kanda, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor deviceincludes a semiconductor substrateincluding an upper surface, a trench electrodeprovided inside a trenchformed on the upper surface, and a trench insulating filmprovided between the trench electrodeand the semiconductor substrate. The semiconductor substrateincludes a first semiconductor layer of a first conductivity type, a lower end of the trench electrodereaching the first semiconductor layer, a deep layerof a second conductivity type partially provided on the first semiconductor layer in contact with the trench insulating film, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer and on the deep layerin contact with the trench insulating film, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer above the deep layer