The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Dec. 13, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong-Hyun Lee, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/82 (2006.01); H01L 27/112 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5252 (2013.01);
Abstract
A semiconductor device includes a trench formed in a substrate; an active region defined in the substrate by the trench; a trench-based dielectric material formed in the trench, and including a rupture portion contacting an edge of the active region; a first conductive plug formed on the trench-based dielectric material so as to contact the rupture portion; and a gate structure including a gate dielectric layer formed on the active region and a gate electrode formed on the gate dielectric layer.