The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Oct. 01, 2019
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Robert Kaplar, Albuquerque, NM (US);
Jack David Flicker, Albuquerque, NM (US);
Olga Lavrova, Albuquerque, NM (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cmin a 1 mmdevice (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile