The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Mar. 15, 2019
Applicants:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Takayuki Tajima, Sagamihara, JP;
Kazuo Shimokawa, Yokohama, JP;
Assignees:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/6835 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49866 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 23/3121 (2013.01); H01L 24/13 (2013.01); H01L 24/17 (2013.01); H01L 25/18 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/81005 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/14511 (2013.01);
Abstract
A semiconductor device includes an insulating layer, a conductive member provided inside the insulating layer, a chip disposed on a first surface of the insulating layer and connected to the conductive member, and an electrode connected to the conductive member via a barrier layer. A resistivity of the barrier layer is higher than a resistivity of the conductive member. At least a portion of the electrode protrudes from a second surface of the insulating layer.