The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Sep. 01, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Hyun Chul Cho, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/32 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01); G11C 16/0483 (2013.01);
Abstract

Provided herein is a memory device and a method of operating the same. The memory device may include a memory block, a voltage generation circuit configured to operate in a first mode in which an operating voltage is generated using an internal voltage or a second mode in which the operating voltage is generated using an external voltage, and to provide the operating voltage to the memory block, and a control logic configured to measure and store a first rising time during which the operating voltage rises to a target level in the first mode, and to control the voltage generation circuit so that a second rising time during which the operating voltage rises to the target level in the second mode is equal to or longer than the first rising time.


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