The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Nov. 30, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Sang Kil Lee, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 12/00 (2006.01); G06F 12/02 (2006.01); G11C 14/00 (2006.01); G11C 16/10 (2006.01); G11C 11/02 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G06F 16/25 (2019.01); G06F 16/00 (2019.01); G06F 16/28 (2019.01);
U.S. Cl.
CPC ...
G11C 11/1677 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 14/0081 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G06F 16/00 (2019.01); G06F 16/258 (2019.01); G06F 16/283 (2019.01);
Abstract
A semiconductor device is provided. The semiconductor device includes: a processor core which processes program data; a first memory mounted on the same semiconductor chip as the processor core; a second memory including an MRAM cell having a first MTJ (Magnetic Tunnel Junction) structure; a third memory including an MRAM cell having a second MTJ structure different from the first MTJ structure, wherein the processor core selectively stores the program data in one of the first memory, the second memory and the third memory, on the basis of an attribute of the program data.