The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Oct. 01, 2020
Nuvoton Technology Corporation, Hsinchu, TW;
Po-Sheng Chen, Hsinchu, TW;
H. C. Tseng, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A glitch detection circuit includes a first P-type field-effect transistor and a second P-type field-effect transistor which are biased by the same current, and a channel width-to-length ratio of the first P-type field-effect transistor is higher than that of the second P-type field-effect transistor. A capacitor having a terminal grounded and another terminal connected to the gates of the first and second P-type field-effect transistors and a power supply terminal. A determination circuit configured to determine that a negative glitch occurs when a voltage decreasing amount of the drain of the first P-type field-effect transistor is greater than that of the second P-type field-effect transistor, and determine that a positive glitch occurs when an voltage increasing amount of the drain of the second P-type field-effect transistor is greater than that of the first P-type field-effect transistor.