The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Dec. 11, 2019
Yale University, New Haven, CT (US);
W. Clarke Smith, New Haven, CT (US);
Jayameenakshi Venkatraman, New Haven, CT (US);
Xu Xiao, New Haven, CT (US);
Lucas Verney, Montrouge, FR;
Luigi Frunzio, North Haven, CT (US);
Shyam Shankar, New Haven, CT (US);
Mazyar Mirrahimi, New Haven, CT (US);
Michel Devoret, New Haven, CT (US);
Yale University, New Haven, CT (US);
Abstract
Techniques for modifying the Josephson potential of a transmon qubit by shunting the transmon with an inductance are described. The inclusion of this inductance may increase the confined potential of the qubit system compared with the conventional transmon, which may lead to a transmon qubit that is stable at much higher drive energies. The inductive shunt may serve the purpose of blocking some or all phase-slips between the electrodes of the qubit. As a result, the inductively shunted transmon may offer an advantage over conventional devices when used for applications involving high energy drives, whilst offering few to no drawbacks in comparison to conventional devices when used at lower drive energies.