The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Mar. 10, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventor:

Martin Podzemny, Lesna, CZ;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/45 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45179 (2013.01); H03F 1/0211 (2013.01); H03F 2203/45318 (2013.01); H03F 2203/45528 (2013.01);
Abstract

In one embodiment, an amplifier circuit may be configured with an output transistor that forms an output current and an output voltage at an output. The amplifier circuit may also include a reference circuit that may be configured to form a reference current that is substantially proportional to the output current. An embodiment of the reference circuit may also be configured to control a transistor to sink current from the output in response changes in the reference current.


Find Patent Forward Citations

Podzemny, Martin. (2022). Method of forming a semiconductor device and circuit (U.S. Patent No. 11223338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11223338

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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