The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Jun. 07, 2018
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Katsunori Misaki, Yonago, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 21/06 (2006.01); H01L 27/12 (2006.01); H01Q 19/10 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01Q 21/065 (2013.01); H01L 27/124 (2013.01); H01L 27/1214 (2013.01); H01L 27/1248 (2013.01); H01Q 19/10 (2013.01); H01L 27/1222 (2013.01); H01L 29/78666 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A TFT substrate includes a dielectric substrate and a plurality of antenna unit regions arranged on the dielectric substrate, each of the antenna unit regions including a TFT and a patch electrode electrically connected to a drain electrode of the TFT. The TFT substrate includes a gate metal layer supported by the dielectric substrate and including a gate electrode of the TFT, a source metal layer supported by the dielectric substrate and including a source electrode of the TFT, a semiconductor layer, supported by the dielectric substrate, of the TFT, a gate insulating layer formed between the gate metal layer and the semiconductor layer, and a flattened layer formed over the gate insulating layer and formed from an organic insulating material.


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