The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Sep. 20, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Woo-Young Park, Yongin-si, KR;

Young-Seok Ko, Suwon-si, KR;

Soo-Gil Kim, Seongnam-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2418 (2013.01); H01L 27/2427 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01);
Abstract

A variable resistance semiconductor device includes a lower conductive wiring; a bottom electrode over the lower conductive wiring; a selection element pattern over the bottom electrode; a first intermediate electrode over the selection element pattern; a second intermediate electrode over the first intermediate electrode; a variable resistance element pattern over the second intermediate electrode; a top electrode over the variable resistance element pattern; and an upper conductive wiring over the top electrode. The first intermediate electrode includes a first material. The second intermediate electrode includes a second material which has a better oxidation resistance and a higher work function than the first material.


Find Patent Forward Citations

Loading…