The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Aug. 07, 2020
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Xiaoli Wu, Shanghai, CN;
Joseph Andrew Yedinak, Mountain Top, PA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A semiconductor device includes a region of semiconductor material comprising a semiconductor layer of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is disposed in the second semiconductor layer extending from the first major surface. The body region comprises a first segment having a first doping concentration, and a second segment laterally adjacent to the first segment and adjacent to the first major surface having a second doping concentration less than the first doping concentration. A source region of the first conductivity type is disposed in the first segment but is not disposed in at least a portion of the second segment. An insulated gate electrode is disposed adjacent to the region of semiconductor material adjoining the first segment, the second segment, and the source region. A conductive layer is electrically connected to the first segment, the second segment, and the first source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.