The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Apr. 11, 2016
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Shiro Hino, Tokyo, JP;
Koji Sadamatsu, Tokyo, JP;
Hideyuki Hatta, Tokyo, JP;
Yuichi Nagahisa, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A technique is provided for effectively suppressing a forward voltage shift due to occurrence of a stacking fault. A semiconductor device relating to the present technique includes a first well region of a second conductivity type, a second well region of the second conductivity type which is so provided as to sandwich the whole of a plurality of first well regions in a plan view and has an area larger than that of each of the first well regions, a third well region of the second conductivity type which is so provided as to sandwich the second well region in a plan view and has an area larger than that of the second well region, and a dividing region of a first conductivity type provided between the second well region and the third well region, having an upper surface which is in contact with an insulator.