The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Mar. 20, 2020
Ablic Inc., Chiba, JP;
Mitsuhiro Yoshimura, Chiba, JP;
Ablic Inc., Chiba, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a trench provided in the semiconductor substrate, a trench gate formed in the trench, a vertical transistor having the trench gate, an active region having the vertical transistor, a field region surrounding the active region and having a protection diode, and a field insulating film formed on a surface of the semiconductor substrate, the protection diode being formed on the field insulating film. The trench gate includes a first polysilicon layer and has an embedded part embedded in the trench and an extension part connected to the embedded part and extending onto the surface of the semiconductor substrate, the protection diode includes a second polysilicon layer thicker than the first polysilicon layer, and an overlapping part having the second polysilicon layer is formed on the extension part.