The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Nov. 20, 2019
Applicant:
Hestia Power Inc., Hsinchu, TW;
Inventors:
Cheng-Tyng Yen, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Fu-Jen Hsu, Hsinchu, TW;
Kuo-Ting Chu, Hsinchu, TW;
Assignee:
Shanghai Hestia Power Inc., Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/73 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7803 (2013.01); H01L 29/0615 (2013.01); H01L 29/1608 (2013.01); H01L 29/7302 (2013.01);
Abstract
The present invention provides a silicon carbide (SiC) semiconductor device integrating a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bidirectional voltage clamping circuit. An object of protecting a device is achieved by using the simple structure above, effectively preventing device damage that may be caused by a positive overvoltage and a negative overvoltage between a gate and a source.