The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Nov. 14, 2017
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Renault S.a.s., Boulogne-billancourt, FR;
Rene Escoffier, La Buisse, FR;
Serge Loudot, Villiers le Bacle, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
RENAULT S.A.S., Boulogne-billancourt, FR;
Abstract
The invention concerns a heterojunction field-effect transistor comprising a stack of first and second III-N type semiconducting layers forming an electron gas or hole layer; a first conduction electrode in electrical contact with the gas layer and a second conduction electrode; a separation layer positioned vertically in line with the first electrode and under the second semiconducting layer; a third semiconducting layer arranged under the separation layer and in electrical contact with the second electrode; a conductive element in electrical contact with the gas layer and electrically connecting the third semiconducting layer and the gas layer; and a control gate positioned between the conductive element and the first conduction electrode.