The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Jun. 22, 2020
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventor:
Magali Gregoire, Crolles, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/321 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/28568 (2013.01); H01L 21/321 (2013.01); H01L 21/32133 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01);
Abstract
A NiPt layer with a Pt atom concentration equal to 15% plus or minus 1% is deposited on a semiconductor region (which may, for example, be a source/drain region of a MOS transistor). An anneal is then performed at a temperature of 260° C. plus or minus 20° C., for a duration in the range from 20 to 60 seconds, in order to produce, from the Nickle-Platinum (NiPt) layer and the semiconductor material of said semiconductor region, an intermetallic layer. Advantageously, the intermetallic layer possesses a structure of heteroepitaxy with the semiconductor material, and includes free Pt atoms.