The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Apr. 09, 2020
Applicants:
Massachusetts Institute of Technology, Cambridge, MA (US);
Board of Trustees of Michigan State University, East Lansing, MI (US);
Inventors:
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/02527 (2013.01); H01L 21/02579 (2013.01); H01L 21/042 (2013.01); H01L 21/043 (2013.01); H01L 21/0415 (2013.01); H01L 29/0847 (2013.01); H01L 29/1602 (2013.01); H01L 29/167 (2013.01); H01L 29/66045 (2013.01);
Abstract
In some embodiments, a semiconductor structure can include: a diamond substrate having a surface conductive layer; a heavily doped region formed in the diamond substrate; and a metal contact positioned over the conductive surface layer such that a first portion of the heavily doped region is covered by the metal contact and a second portion of the heavily doped region is not covered by the metal contact.